cys t ech electronics corp. s pec. no. : c233 k3 issued date : 20 13.05.09 revised date : 2 013.12.25 page no. : 1/7 bt a1013k3 c y s t ek product s pecification pnp epitaxial planar transistor BTA1013K3 features ? low v ce(sat) , v ce(sat) = -387mv (typ.) @ i c /i b =-1a/-100ma ? high breakdown voltage, bv ceo =-160v ? complementary to btc2383k3 ? pb-free lead plating and halogen-free package sy mbol outline BTA1013K3 to-92l b base c collector e emitter ordering information device package shipping to-92l 2000 pcs / tape & box BTA1013K3-0-tb-g (pb-free lead plating and halogen-free package) to-92l BTA1013K3-0-bm-g (pb-free lead plating and halogen-free package) 500 pcs / bag, 10 bags/box, 10 boxes/carton environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products pack ing sp ec, tb : 20 00 pcs / tap e & b ox ; b m : 5 00 p c s/b a g , 10 b a gs/bo x , 10 b o x e s/car t o n product rank, zero for no rank products product name http://
cys t ech electronics corp. s pec. no. : c233 k3 issued date : 20 13.05.09 revised date : 2 013.12.25 page no. : 2/7 bt a1013k3 c y s t ek product s pecification absolute maximum ratings (ta=25 c) parameter symbol limits unit collecto r -b ase v o ltage v cbo -160 v collector-emitter voltage v ceo -160 v emitter-base voltage v ebo -7 v collector current (dc) i c -1 a collector current (pulse) i cp -2 (no te) a power dissipation p d 0.9 w thermal resistance, junction to ambient r ja 139 c/w operating junction temperature range tj -55~+150 c storage temperature range tstg -55~+150 c note : pulse test, p w 10ms, duty 50%. characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -160 - - v i c =-100 a bv ceo -160 - - v i c =-10ma bv ebo -7 - - v i e =-10 a i cbo - - -100 na v cb =-160v i ebo - - -100 na v eb =-7v *v ce(sat) 1 - -60 -100 mv i c =-100ma, i b =-10ma *v ce(sat) 2 - -140 -300 mv i c =-500ma, i b =-50ma *v ce(sat) 3 - -387 -750 mv i c =-1a, i b =-100ma *v be(sat) - -0.83 -1.2 v i c =-500ma, i b =-50ma *v be(on) -0.45 - -0.75 v v ce =-5v, i c =-5ma *h fe 1 90 - - - v ce =-5v, i c =-10ma *h fe 2 100 - 200 - v ce =-5v, i c =-200ma f t 50 - - mhz v ce =-10v, i c =-50ma, f=100mhz cob - 13 20 pf v cb =-10v, f=1mhz *pulse test: pulse width 380 s, duty cycle 2%
cys t ech electronics corp. s pec. no. : c233 k3 issued date : 20 13.05.09 revised date : 2 013.12.25 page no. : 3/7 bt a1013k3 c y s t ek product s pecification typical characteristics e m i t t e r g r ou nde d o ut pu t c ha ra c t e r i s t i c s 0 0. 02 0. 04 0. 06 0. 08 0. 1 0. 12 0. 14 0. 16 01 23 45 6 -v c e , c o l l e c t or-t o -e m i t t e r v o l t a g e (v ) -ic , c o l l e c t o r c u r r e nt (a ) 200ua 300ua 400ua 500ua 1ma -ib=100ua e m i t t e r g r oun de d o u t put c ha ra c t e r i s t i c s 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 012 3456 - v c e , c o lle c t o r - t o - e m i tte r vo lta g e ( v ) - i c , c ol l e c t o r c ur r e nt ( a ) 1.5ma 2 m a 2.5ma 5ma -ib=500ua e m i t t e r g r ou nde d o u t p u t c ha ra c t e r i s t i c s 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 1 012 34 56 -v c e , c o l l e c t or-t o - e m i t t e r v o l t a ge (v ) -ic , c o l l e c t o r c u rre n t (a ) 4ma 6 m a 8ma 20ma -ib=2ma e m i t t e r g rounde d o u t put c ha ra c t e r i s t i c s 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 01 23 4 5 6 - v c e , c o ll ec t o r - to - e m i tt er v o l t a g e ( v ) -ic , c o l l e c t o r c u rre n t (a ) 10ma 25ma 50ma -ib=5ma curre nt g a i n v s c ol l e c t or c urre nt 10 100 1000 1 10 100 1000 -ic , c o l l e c t o r c u rre n t (ma ) c u rre n t g a i n --- h f e t a = 1 25 c t a = 75 c t a = 25 c ta = 0 c ta=-40c vce=-1v c u rre nt g a i n vs c ol l e c t o r c urre nt 10 100 1000 1 1 0 100 1000 - i c , c o l le c t o r c u r r e n t ( m a) c u rre n t g a i n - --h f e t a = 1 25 c ta = 7 5 c ta = 2 5 c ta = 0 c ta=-40c vce=-2v
cys t ech electronics corp. s pec. no. : c233 k3 issued date : 20 13.05.09 revised date : 2 013.12.25 page no. : 4/7 bt a1013k3 c y s t ek product s pecification typical characteristics(cont.) c u rre nt g a i n vs c ol l e c t o r c urre nt 10 10 0 10 00 1 10 100 1000 -ic , c o l l e c t or c u rre n t (ma ) c u rr e n t g a i n ---h f e ta=125c ta=75c ta=25c ta=0c ta=-40c vce=-5v s a tu r a ti o n v o ltag e v s c o ll ect o r c u r r e n t 10 10 0 10 00 1 10 100 1000 -ic , c o l l e c t o r c u rre n t (ma ) s a tu r a ti o n vo lta g e - - - ( m v) ta=125c ta=75c ta=25c ta=0c ta=-40c vcesat@ic=10ib s a t ura t i on v ol t a ge vs c o l l e c t or c urre n t 100 1 000 10 000 1 1 0 100 1000 -ic , c o l l e c t o r c urre n t ma ) s a t u r a t i o n v o l t a ge - --(mv ) vbesat@ic=10ib ta=-40c ta=0c ta=25c ta=75c ta=125c o n v ol t a ge v s col l e c t o r c u rre nt 100 10 00 10 000 1 1 0 100 10 00 -ic , c o l l e c t o r c urre n t ( m a ) o n v o l t a ge - --(mv ) vbeon@vce=-1v ta=-40c ta=0c ta=25c ta=75c ta=125c c a p a c i t a n ce v s r ev er s e - b i a s e d v o lt ag e 1 10 100 1000 0. 1 1 10 1 00 -v r , r e v e rs e -b i a s e d v o l t a g e (v ) c a p a c i t a nc e --- (p f ) cib cob po we r de r a t i n g c u r v e 0 0. 3 0. 6 0. 9 1. 2 0 25 5 0 75 100 12 5 150 1 75 a m bi e n t t e mp e ra t u re ---t a ( ) p o w e r d i s s i p a t i o n ---p d (w )
cys t ech electronics corp. s pec. no. : c233 k3 issued date : 20 13.05.09 revised date : 2 013.12.25 page no. : 5/7 bt a1013k3 c y s t ek product s pecification to-92l taping outline millimeters dim item min. max. a1 component body width 4.70 5.10 a component body height 7.80 8.20 t component body thickness 3.70 4.10 d lead wire diameter 0.35 0.55 d1 lead wire diameter 1 0.60 0.80 p pitch of component 12.40 13.00 p0 feed hole pitch 12.50 12.90 p2 hole center to component center 6.05 6.65 f1, f2 lead to lead distance 2.20 2.80 h component alignment, f-r -1.00 1.00 w tape width 17.50 19.00 w0 hole down tape width 5.50 6.50 w1 hole position 8.50 9.50 w2 hole down tape position - 1.00 h height of component fr om tape center 19.00 21.00 h0 lead wire clinch height 15.50 16.50 l1 lead wire (tape portion) 2.50 - d0 feed hole diameter 3.80 4.20 t1 taped lead thickness 0.35 0.45 t2 carrier tape thickness 0.15 0.25 p1 position of hole 3.55 4.15 p component alignment -1.00 1.00
cys t ech electronics corp. s pec. no. : c233 k3 issued date : 20 13.05.09 revised date : 2 013.12.25 page no. : 6/7 bt a1013k3 c y s t ek product s pecification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cys t ech electronics corp. s pec. no. : c233 k3 issued date : 20 13.05.09 revised date : 2 013.12.25 page no. : 7/7 bt a1013k3 c y s t ek product s pecification to-92l dimension *: typical inches millimeters inches millimeters dim min. max. min. max. a1013 marking: s t yle: pin 1.emitter 2.colle ctor 3.ba se 3-l ead t o -9 2l plasti c pa ckage cys t ek pa ck a g e code: k3 product name date code: y ear+month y ear: 7 2007, 8 20 08 9 9, a 10, b 11 , c 12 month: 1 1, 2 2, ??? , dim min. max. min. max. a 0.146 0.161 3.700 4.100 e 0.307 0.323 7.800 8.200 a1 0.050 0.062 1.280 1.580 e *0.05 *1.270 b 0.014 0.022 0.350 0.550 e1 0.096 0.104 2.440 2.640 b1 0.024 0.031 0.600 0.800 l 0.543 0.559 13.800 14.200 c 0.014 0.018 0.350 0.450 ? - 0.063 - 1.600 d 0.185 0.201 4.700 5.100 h 0.000 0.012 0.000 0.300 d1 0.157 - 4.000 - note s: 1.controlling dimension: millimeter s. 2.maximum lead thickness include s lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is an y q uestion w i th p a ck ing specification or p a cking metho d , please c ont act y our local c y s t ek sales of fice. material: ? lead: pur e tin plated ? mold compou n d : epoxy resin fa mily , flammabilit y solid burning cla ss: ul94v -0 im portan t n o tice : ? all rights are re served. reprod u c tion in w hole or in part is prohibited w i thout the p r ior w r itten a pprov al of c y stek. ? c y stek reserv es the right to m a ke changes to its products w i tho u t notice. ? cy st e k semic ond uct o r pr odu cts are n o t warr ante d t o be s u it able f o r use i n l i fe-su p p o rt a p p licatio ns, or sys tems. ? c y stek assumes no liability fo r an y consequenc e of customer pr oduct design, infringement of pat e n ts, or application assistance .
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